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SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited b y R DS(on) *
100
Limited b y R DS(on) *
10
1 ms
10
100 μs
1 ms
1
10 ms
100 ms
1
10 ms
100 ms
DC
1s
0.1
T A = 25 °C
Single P u lse
10 s
DC
0.1
T C = 25 °C
Single P u lse
B V DSS
B V DSS
0.01
Limited
0.01
Limited
0.01
0.1 1 10
100
0.01
0.1
1
10
100
9
7
5
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
35
28
21
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Case
4
2
0
14
7
0
Package Limited
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T A - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
T A - Ambient Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation P D is based on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
www.vishay.com
5
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